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Title	Nitride semiconductors : handbook on materials and devices / [edited by] Pierre Ruterana, Martin Albrecht, Jörg Neugebauer
Imprint	Weinheim ; [Great Britain] : Wiley-VCH, [2003]
	©2003
Edition	First edition

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Bowling Green Main Lib-8th floor TK7871.85.N57 2003 AVAILABLE

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Contents

Preface

List of Contributors

Pt. 1 Material 1

1 High-Pressure Crystallization of GaN / Izabella Grzegory, Stanislaw Krukowski, Michael Leszczynski, Piotr Perlin, Tadeusz Suski, Sylwester Porowski 3

2 Epitaxial Lateral Overgrowth of GaN / Pierre Gibart, Bernard Beaumont, Philippe Vennegues 45

3 Plasma-Assisted Molecular Beam Epitaxy of III-V Nitrides / Alexandros Georgakilas, Hock Min Ng, Philomela Komninou 107

4 Growth of Gallium Nitride by Hydride Vapor Phase Epitaxy / Agnes Trassoudaine, Robert Cadoret, Eric Aujol 193

5 Growth and Properties of InN / Valery Davydov, Albert Klochikhin, Sergey Ivanov, Jochen Aderhold, Akio Yamamoto 241

6 Surface Structure and Adatom Kinetics of Group-III Nitrides / Jorg Neugebauer 295

Pt. 2 Defects and Interfaces 319

7 Topological Analysis of Defects in Nitride Semiconductors / Georgios P. Dimitrakopulos, Philomela Komninou, Theodoros Karakostas, Robert C. Pond 321

8 Extended Defects in Wurtzite GaN Layers: Atomic Structure, Formation, and Interaction Mechanisms / Pierre Ruterana, Ana M. Sanchez, Gerard Nouet 379

9 Strain, Chemical Composition, and Defects Analysis at Atomic Level in GaN-based Epitaxial Layers / Slawomir Kret, Pierre Ruterana, Claude Delamarre, Tarek Benabbas, Pawel Dluzewski 439

Pt. 3 Processing and Devices 489

10 Ohmic Contracts to GaN / Philip J. Hartlieb, Robert F. Davis, Robert J. Nemanich 491

11 Electroluminescent Diodes and Laser Diodes / Hiroshi Amano 529

12 GaN-Based Modulation-Doped FETs and Heterojunction Bipolar Transistors / Hadis Morkoc, Lianghong Liu 547

13 GaN-Based UV Photodetectors / Franck Omnes, Eva Monroy 627

Subject Index 661

Description xxii, 664 pages : illustrations ; 25 cm

Note Includes bibliographical references and index

Contents Pt. 1. Material -- 1. High-Pressure Crystallization of GaN / Izabella Grzegory, Stanislaw Krukowski, Michael Leszczynski, Piotr Perlin, Tadeusz Suski and Sylwester Porowski -- 2. Epitaxial Lateral Overgrowth of GaN / Pierre Gibart, Bernard Beaumont and Philippe Vennegues -- 3. Plasma-Assisted Molecular Beam Epitaxy of III-V Nitrides / Alexandros Georgakilas, Hock Min Ng and Philomela Komninou -- 4. Growth of Gallium Nitride by Hydride Vapor Phase Epitaxy / Agnes Trassoudaine, Robert Cadoret and Eric Aujol -- 5. Growth and Properties of InN / Valery Davydov, Albert Klochikhin, Sergey Ivanov, Jochen Aderhold and Akio Yamamoto -- 6. Surface Structure and Adatom Kinetics of Group-III Nitrides / Jorg Neugebauer -- Pt. 2. Defects and Interfaces -- 7. Topological Analysis of Defects in Nitride Semiconductors / Georgios P. Dimitrakopulos, Philomela Komninou, Theodoros Karakostas and Robert C. Pond -- 8. Extended Defects in Wurtzite GaN Layers: Atomic Structure, Formation, and Interaction Mechanisms / Pierre Ruterana, Ana M. Sanchez and Gerard Nouet -- 9. Strain, Chemical Composition, and Defects Analysis at Atomic Level in GaN-based Epitaxial Layers / Slawomir Kret, Pierre Ruterana, Claude Delamarre, Tarek Benabbas and Pawel Dluzewski -- Pt. 3. Processing and Devices -- 10. Ohmic Contracts to GaN / Philip J. Hartlieb, Robert F. Davis and Robert J. Nemanich -- 11. Electroluminescent Diodes and Laser Diodes / Hiroshi Amano -- 12. GaN-Based Modulation-Doped FETs and Heterojunction Bipolar Transistors / Hadis Morkoc and Lianghong Liu -- 13. GaN-Based UV Photodetectors / Franck Omnes and Eva Monroy

Subjects Semiconductors -- Materials -- Handbooks, manuals, etc

Nitrides -- Handbooks, manuals, etc

Genre/Form Handbooks and manuals. fast

Aufsatzsammlung

Alt Name Ruterana, Pierre

Albrecht, Martin

Neugebauer, Jörg

LC NO TK7871.15.N57 N54 2003

Dewey No 621.38152 21

LC NO TK7871.85 .N57 2003

OCLC # 50177584

ISBN 3527403876

9783527403875

	Preface
	List of Contributors
Pt. 1	Material	1
1	High-Pressure Crystallization of GaN / Izabella Grzegory, Stanislaw Krukowski, Michael Leszczynski, Piotr Perlin, Tadeusz Suski, Sylwester Porowski	3
2	Epitaxial Lateral Overgrowth of GaN / Pierre Gibart, Bernard Beaumont, Philippe Vennegues	45
3	Plasma-Assisted Molecular Beam Epitaxy of III-V Nitrides / Alexandros Georgakilas, Hock Min Ng, Philomela Komninou	107
4	Growth of Gallium Nitride by Hydride Vapor Phase Epitaxy / Agnes Trassoudaine, Robert Cadoret, Eric Aujol	193
5	Growth and Properties of InN / Valery Davydov, Albert Klochikhin, Sergey Ivanov, Jochen Aderhold, Akio Yamamoto	241
6	Surface Structure and Adatom Kinetics of Group-III Nitrides / Jorg Neugebauer	295
Pt. 2	Defects and Interfaces	319
7	Topological Analysis of Defects in Nitride Semiconductors / Georgios P. Dimitrakopulos, Philomela Komninou, Theodoros Karakostas, Robert C. Pond	321
8	Extended Defects in Wurtzite GaN Layers: Atomic Structure, Formation, and Interaction Mechanisms / Pierre Ruterana, Ana M. Sanchez, Gerard Nouet	379
9	Strain, Chemical Composition, and Defects Analysis at Atomic Level in GaN-based Epitaxial Layers / Slawomir Kret, Pierre Ruterana, Claude Delamarre, Tarek Benabbas, Pawel Dluzewski	439
Pt. 3	Processing and Devices	489
10	Ohmic Contracts to GaN / Philip J. Hartlieb, Robert F. Davis, Robert J. Nemanich	491
11	Electroluminescent Diodes and Laser Diodes / Hiroshi Amano	529
12	GaN-Based Modulation-Doped FETs and Heterojunction Bipolar Transistors / Hadis Morkoc, Lianghong Liu	547
13	GaN-Based UV Photodetectors / Franck Omnes, Eva Monroy	627
	Subject Index	661