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Conference	Symposium on III-V Nitride Materials and Processes (2nd : 1997 : Paris, France)
Title	Proceedings of the Second Symposium on III-V Nitride Materials and Processes / editors, C.R. Abernathy ... [et al.] ; Dielectric Science & Technology, Electronics, and High Temperature Material[s] Divisions of the Electrochemical Society [and] European III-V Nitride Community
Publish Info	Pennington, NJ : Electrochemical Society, c1998

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Contents

Preface

MBE-Growth, Physics and Application of Group III Nitrides / J. W. Orton, C. T. Foxon 1

Metal - GaN Contact Technology / Q. Z. Liu, L. S. Yu, K. V. Smith [et al.] 11

Enhanced Two Dimensional Growth of Low Temperature GaN Buffer Layers by N[subscript 2] Plasma Pretreatment of Sapphire Substrates / M. H. Kim, C. Sone, T. H. Yi [et al.] 25

On the Electronic and Optical Properties of [beta]-GaN and GaInN / G. C. Rohr 33

The Role of Plasma Chemistry and Ion Density in Dry Etching of Nitrides / C. B. Vartuli, S. J. Pearton, C. R. Abernathy [et al.] 39

Electrical and Optical Properties of the Device Structures Based on GaN after Dry Etching / A. S. Usikov, W. V. Lundin, U. I. Ushakov [et al.] 57

Optical and Structural Characterization of a GaN/InGaN Laser Heterostructure Grown by Metal Organic Chemical Vapor Deposition / A. S. Usikov, W. L. Lundin, U. I. Ushakov [et al.] 63

The World-Wide Market Size and Potential of Wide-Bandgap Semiconductor Power Electronic Devices / A. Katz 69

Ion Implantation in Wide Bandgap Semiconductors: Device Needs and Technological Challenges / J. C. Zolper, S. J. Pearton 76

Mechanisms of Electroluminescence in InGaN/AlGaN/GaN Heterojunctions with Quantum Wells / A. E. Yunovitch, V. E. Kudryashow, A. N. Turkin [et al.] 83

Reflectance Spectroscopy of Excitonic States in GaN/6H-SiC / M. A. Jacobson, D. K. Nelson, A. V. Sel'kin 103

The Growth Features of III-N Layers Grown on Sapphire Substrates and Their Optical and Electronic Properties / A. S. Usikov, W. V. Lundin, U. I. Ushakov [et al.] 110

The Influence of GaN Buffer Layer Stoichiometry on Properties of GaN Epilayer / A. S. Usikov, W. V. Lundin, U. I. Ushakov [et al.] 118

A Chemical Modification Process Growth Silicon Dioxide on Gallium Arsenide by Liquid Phase Deposition / M. P. Houng, C. J. Huang, Y. H. Wang [et al.] 125

Preparation and Characterization of Thin Cubic Boron Nitride Films / K. Bewilogua, A. Schutze, H. Walter [et al.] 134

Investigation of Boron Nitride Films Deposited by RF Magnetron Sputtering With In-Situ Spectroscopic Ellipsometry and Stress Measurements / S. Logothetidis, C. Charitidis, P. Patsalas [et al.] 142

Stabilizing Effects Of Hydrogen and Halogens on C-BN (III): A Theoretical Study / B. Marlid, K. Larsson, J.-O. Carlsson 151

Far Cold Remote Nitrogen Plasma for the Elaboration of Hard Nitrides Films / C. Jama, B. Mutel, E. Baclez [et al.] 159

Optical Properties of GaN: Mg / E. Oh, Y. Park, H. Park 169

Optical Gain, Hole Transport, Intervalence Band Optical Transitions in Group III Nitrides: Envelope Function Description / Y. Sirenko, J. B. Jeon, K. W. Kim [et al.] 177

Recent Results in High Pressure Growth of GaN Single Crystals / S. Krukowski, M. Bockowski, I. Grzegory [et al.] 189

Synthesis of Bulk Polycrystalline GaN / J. C. Angus, C. C. Hayman, E. A. Evans [et al.] 201

Electrical and Optical Properties of C, O and H in III-V Nitrides / S. J. Pearton, J. W. Lee, C. R. Abernathy [et al.] 209

Spatial Characterization of Doped SiC Wafers by Raman Spectroscopy / J. C. Burton, L. Sun, M. Pophristic [et al.] 220

In-Situ Observation and Growth of Wide Bandgap Nitrides Using Emission Spectroscopy / M. E. Kordesch 228

Properties of GaN Thin Films Prepared by Laser Induced Molecular Beam Epitaxy / M. Gross, G. Henn, H. Schroder 236

Modelling of MOVPE Of Group III-Nitrides in Horizontal Tube Reactor / A. O. Galjukov, Yu. E. Egorov, Yu. N. Makarov [et al.] 244

Synthesis of Bulk Nitrides of Ga, Al and In Using Atomic Nitrogen / L. Allers, R. Clampitt, J. N. Hiscock [et al.] 253

A Model of the "Yellow Band" Defect Complex in GaN / A. E. Yunovich 258

Rare Earth Doping of III-V Nitride Semiconductors / J. M. Zavada 261

GaN Based LEDs By MOVPE and MBE / M. Kamp, C. Kirchner, M. Mayer [et al.] 272

Growth of Bulk GaN By Reaction of Ga/Sn with Activated Nitrogen / T. D. Moustakas, J. P. Dismukes 284

Description viii, 294 p. : ill. ; 23 cm

Series Proceedings ; v. 97-34

Proceedings (Electrochemical Society) ; v. 97-34

Note "This volume is a permanent record of the presentations at the 2nd ESC Symposium on III-V Nitride Materials and Processes, held as part of the 192nd Meeting of the Electrochemical Society, in Paris [France] from August 31-September 5, 1997."--Preface

Includes bibliographical references and indexes

Subjects Electronics -- Materials -- Congresses

Transition metal nitrides -- Congresses

Semiconductors -- Materials -- Congresses

Alt Name Abernathy, C. R

Electrochemical Society. Dielectric Science and Technology

Electrochemical Society. Electronics Division

Electrochemical Society. High Temperature Materials Division

Electrochemical Society. Meeting (192nd : 1997 : Paris, France)

Other Titles III-V nitride materials and processes

LC NO TK7871 .S896 1997

Dewey No 621.381 21

OCLC # 38865583

ISBN 1566771870

LCCN 98158682

	Preface
	MBE-Growth, Physics and Application of Group III Nitrides / J. W. Orton, C. T. Foxon					1
	Metal - GaN Contact Technology / Q. Z. Liu, L. S. Yu, K. V. Smith [et al.]					11
	Enhanced Two Dimensional Growth of Low Temperature GaN Buffer Layers by N[subscript 2] Plasma Pretreatment of Sapphire Substrates / M. H. Kim, C. Sone, T. H. Yi [et al.]					25
	On the Electronic and Optical Properties of [beta]-GaN and GaInN / G. C. Rohr					33
	The Role of Plasma Chemistry and Ion Density in Dry Etching of Nitrides / C. B. Vartuli, S. J. Pearton, C. R. Abernathy [et al.]					39
	Electrical and Optical Properties of the Device Structures Based on GaN after Dry Etching / A. S. Usikov, W. V. Lundin, U. I. Ushakov [et al.]					57
	Optical and Structural Characterization of a GaN/InGaN Laser Heterostructure Grown by Metal Organic Chemical Vapor Deposition / A. S. Usikov, W. L. Lundin, U. I. Ushakov [et al.]					63
	The World-Wide Market Size and Potential of Wide-Bandgap Semiconductor Power Electronic Devices / A. Katz					69
	Ion Implantation in Wide Bandgap Semiconductors: Device Needs and Technological Challenges / J. C. Zolper, S. J. Pearton					76
	Mechanisms of Electroluminescence in InGaN/AlGaN/GaN Heterojunctions with Quantum Wells / A. E. Yunovitch, V. E. Kudryashow, A. N. Turkin [et al.]					83
	Reflectance Spectroscopy of Excitonic States in GaN/6H-SiC / M. A. Jacobson, D. K. Nelson, A. V. Sel'kin					103
	The Growth Features of III-N Layers Grown on Sapphire Substrates and Their Optical and Electronic Properties / A. S. Usikov, W. V. Lundin, U. I. Ushakov [et al.]					110
	The Influence of GaN Buffer Layer Stoichiometry on Properties of GaN Epilayer / A. S. Usikov, W. V. Lundin, U. I. Ushakov [et al.]					118
	A Chemical Modification Process Growth Silicon Dioxide on Gallium Arsenide by Liquid Phase Deposition / M. P. Houng, C. J. Huang, Y. H. Wang [et al.]					125
	Preparation and Characterization of Thin Cubic Boron Nitride Films / K. Bewilogua, A. Schutze, H. Walter [et al.]					134
	Investigation of Boron Nitride Films Deposited by RF Magnetron Sputtering With In-Situ Spectroscopic Ellipsometry and Stress Measurements / S. Logothetidis, C. Charitidis, P. Patsalas [et al.]					142
	Stabilizing Effects Of Hydrogen and Halogens on C-BN (III): A Theoretical Study / B. Marlid, K. Larsson, J.-O. Carlsson					151
	Far Cold Remote Nitrogen Plasma for the Elaboration of Hard Nitrides Films / C. Jama, B. Mutel, E. Baclez [et al.]					159
	Optical Properties of GaN: Mg / E. Oh, Y. Park, H. Park					169
	Optical Gain, Hole Transport, Intervalence Band Optical Transitions in Group III Nitrides: Envelope Function Description / Y. Sirenko, J. B. Jeon, K. W. Kim [et al.]					177
	Recent Results in High Pressure Growth of GaN Single Crystals / S. Krukowski, M. Bockowski, I. Grzegory [et al.]					189
	Synthesis of Bulk Polycrystalline GaN / J. C. Angus, C. C. Hayman, E. A. Evans [et al.]					201
	Electrical and Optical Properties of C, O and H in III-V Nitrides / S. J. Pearton, J. W. Lee, C. R. Abernathy [et al.]					209
	Spatial Characterization of Doped SiC Wafers by Raman Spectroscopy / J. C. Burton, L. Sun, M. Pophristic [et al.]					220
	In-Situ Observation and Growth of Wide Bandgap Nitrides Using Emission Spectroscopy / M. E. Kordesch					228
	Properties of GaN Thin Films Prepared by Laser Induced Molecular Beam Epitaxy / M. Gross, G. Henn, H. Schroder					236
	Modelling of MOVPE Of Group III-Nitrides in Horizontal Tube Reactor / A. O. Galjukov, Yu. E. Egorov, Yu. N. Makarov [et al.]					244
	Synthesis of Bulk Nitrides of Ga, Al and In Using Atomic Nitrogen / L. Allers, R. Clampitt, J. N. Hiscock [et al.]					253
	A Model of the "Yellow Band" Defect Complex in GaN / A. E. Yunovich					258
	Rare Earth Doping of III-V Nitride Semiconductors / J. M. Zavada					261
	GaN Based LEDs By MOVPE and MBE / M. Kamp, C. Kirchner, M. Mayer [et al.]					272
	Growth of Bulk GaN By Reaction of Ga/Sn with Activated Nitrogen / T. D. Moustakas, J. P. Dismukes					284