A New MOS Phototransistor Operating in a Non-Destructive Readout Mode
Abstract
A new MOS phototransistor with high optical gain and non-destructive readout operation is proposed as a photosensor in an imaging device. The principle of this device is a conduction mechanism whereby an incident light changes the surface potential under the MOS gate and the electron current flowing in a buried channel is modulated by the surface potential. The device has a saturation exposure value of 0.1 lx\cdots, saturation output voltage of 500 mV at VDD{=}2 V, the dynamic range of 50 dB with no signal processing and non-destructive readout operation.
- Publication:
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Japanese Journal of Applied Physics
- Pub Date:
- May 1985
- DOI:
- 10.1143/JJAP.24.L323
- Bibcode:
- 1985JaJAP..24L.323M